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BLS8G2731L-400P技术文档下载：
BLS8G2731L-400P产品应用图解：
BLS8G2731L-400P - LDMOS S-band radar power transistor
BLS8G2731L-400P是NXP公司的一款RF功率晶体管产品，BLS8G2731L-400P是LDMOS S-band radar power transistor，本站介绍了BLS8G2731L-400P的封装应用图解、特点和优点、功能等，并给出了与BLS8G2731L-400P相关的NXP元器件型号供参考。
BLS8G2731L-400P - LDMOS S-band radar power transistor - RF功率晶体管 - RF MMIC放大器与混频器 - 恩智浦, LLC
产品描述
400 W LDMOS power transistor for S-band radar applications in the frequency range from2.7 GHz to 3.1 GHz.
产品特性和优势
- High efficiency
- Excellent ruggedness
- Designed for S-band operation
- Excellent thermal stability
- Easy power control
- Integrated dual sided ESD protection enables excellent off-state isolation
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
产品应用
- S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz
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