The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using NXP’s state ofthe art GEN8 LDMOS technology. This multiband device is perfectly suited as generalpurpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.Available in gull wing or straight lead outline.

• Designed for broadband operation (frequency 700 MHz to 1000 MHz)
• High section-to-section isolation enabling multiple combinations
• Integrated temperature compensated bias
• Biasing of individual stages is externally accessible
• Integrated ESD protection
• Excellent thermal stability
• High power gain
• On-chip matching for ease of use
• Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)

• RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequencyrange. Possible circuit topologies are the following:
  • Dual section or single ended
  • Doherty
  • Quadrature combined
  • Push-pull

• BZV55-C2V7 - 稳压器二极管
• 74ABT16240A - 16位反相缓冲器/线路驱动器；3态
• 74HC7540DB - 八进制施密特触发缓冲器/线路驱动器；3态；反相
• PBSS3540M - 40 V、0.5 A PNP低VCEsat (BISS)晶体管
• 74AUP1G06GS - 低功耗反相器，带开漏输出
• PMP5501V - PNP/PNP匹配双晶体管
• PSMN3R0-30MLC - N沟道30 V 3.15m?逻辑电平MOSFET，采用LFPAK封装，使用NextPower技术
• BLF7G27LS-90P - 功率LDMOS晶体管
• BLS6G2735L-30 - S波段LDMOS晶体管
• 74HC573BQ - 八进制D型透明锁存器；3态