BLL8H1214L-250 - LDMOS L-band radar power transistor

BLL8H1214L-250是NXP恩智浦公司的一款RF功率晶体管产品，BLL8H1214L-250是LDMOS L-band radar power transistor，本站介绍了BLL8H1214L-250的封装应用图解、特点和优点、功能等，并给出了与BLL8H1214L-250相关的NXP元器件型号供参考。

BLL8H1214L-250 - LDMOS L-band radar power transistor - RF功率晶体管 - RF MMIC放大器与混频器 - 恩智浦

产品描述

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to1.4 GHz range.

产品特性和优势

Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)

产品应用

L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequencyrange

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