Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection

• On-board DC-to-DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control

• PDTB123EU - 500 mA、50 V PNP配电阻晶体管
• BC53PA - 80 V，1 A PNP中等功率晶体管
• BGU7224 - 2.4 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
• BLC8G20LS-310AV - Power LDMOS transistor
• BUK9518-55A - N沟道TrenchMOS逻辑电平FET
• 74AVC8T245BQ - 8位双电源转换收发器，带可配置电压转换功能；3态
• BUK7K45-100E - Dual N-channel 100 V, 37.6 mΩ standard level MOSFET
• BUK7Y08-40B - N沟道TrenchMOS标准电平FET
• BZT52H-C15 - 采用SOD123F封装的单倍齐纳二极管
• 74LVC126A - 四路缓冲器/线路驱动器，带5 V容压输入/输出；3态