

PBSS4032NT - 30 V, 2.6 A NPN low VCEsat (BISS) transistor
PBSS4032NT是NXP公司的一款低压低VCEsat (BISS)晶体管产品,PBSS4032NT是30 V, 2.6 A NPN low VCEsat (BISS) transistor,本站介绍了PBSS4032NT的封装应用图解、特点和优点、功能等,并给出了与PBSS4032NT相关的NXP元器件型号供参考。
PBSS4032NT - 30 V, 2.6 A NPN low VCEsat (BISS) transistor - 低压低VCEsat (BISS)晶体管 - 低VCEsat(BISS)晶体管 - 恩智浦, LLC
产品描述
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
产品特性和优势
- Low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
产品应用
- DC-to-DC conversion
- Battery-driven devices
- Power management
- Charging circuits
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