BLM8G0710S-45ABG - LDMOS 2-stage power MMIC

BLM8G0710S-45ABG是NXP恩智浦公司的一款RF功率晶体管产品，BLM8G0710S-45ABG是LDMOS 2-stage power MMIC，本站介绍了BLM8G0710S-45ABG的封装应用图解、特点和优点、功能等，并给出了与BLM8G0710S-45ABG相关的NXP元器件型号供参考。

BLM8G0710S-45ABG - LDMOS 2-stage power MMIC - RF功率晶体管 - RF MMIC放大器与混频器 - 恩智浦

产品描述

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using NXP’sstate of the art GEN8 LDMOS technology. This multiband device is perfectly suited assmall cell final stage in Doherty configuration, or as general purpose driver in the 700MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

产品特性和优势

Designed for broadband operation (frequency 700 MHz to 1000 MHz)
High section-to-section isolation enabling multiple combinations
High Doherty efficiency thanks to 2 : 1 asymmetry
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)

产品应用

RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency range. Possiblecircuit topologies are the following:
- Asymmetric final stage in Doherty configuration
- Asymmetric driver for high power Doherty amplifier

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