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BLF8G20LS-140(G)V技术文档下载：
BLF8G20LS-140(G)V产品应用图解：
BLF8G20LS-140(G)V - Power LDMOS transistor
BLF8G20LS-140(G)V是NXP公司的一款RF功率晶体管产品，BLF8G20LS-140(G)V是Power LDMOS transistor，本站介绍了BLF8G20LS-140(G)V的封装应用图解、特点和优点、功能等，并给出了与BLF8G20LS-140(G)V相关的NXP元器件型号供参考。
BLF8G20LS-140(G)V - Power LDMOS transistor - RF功率晶体管 - RF MMIC放大器与混频器 - 恩智浦, LLC
产品描述
140 W LDMOS power transistor for base station applications at frequencies from1805 MHz to 1990 MHz.
产品特性和优势
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth (150 MHz typical)
- Designed for broadband operation (1805 MHz to 1990 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
产品应用
- RF power amplifiers for base stations and multi carrier applications in the 1805 MHzto 1990 MHz frequency range
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