140 W LDMOS power transistor for base station applications at frequencies from1805 MHz to 1990 MHz.

• Excellent ruggedness
• High efficiency
• Low thermal resistance providing excellent thermal stability
• Decoupling leads to enable improved video bandwidth (150 MHz typical)
• Designed for broadband operation (1805 MHz to 1990 MHz)
• Lower output capacitance for improved performance in Doherty applications
• Designed for low memory effects providing excellent pre-distortability
• Internally matched for ease of use
• Integrated ESD protection
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

• RF power amplifiers for base stations and multi carrier applications in the 1805 MHzto 1990 MHz frequency range

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