The 74LVC30A is an 8-input NAND gate.

Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of thesedevices in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and falltime.

This device is fully specified for partial power-down applications using IOFF.The IOFF circuitry disables the output, preventing the damaging backflow current throughthe device when it is powered down.

• Wide supply voltage range from 1.2 V to 3.6 V
• Inputs accept voltages up to 5.5 V
• CMOS low power consumption
• Direct interface with TTL levels
• Complies with JEDEC standard:
  • JESD8-7A (1.65 V to 1.95 V)
  • JESD8-5A (2.3 V to 2.7 V)
  • JESD8-C/JESD36 (2.7 V to 3.6 V)
• ESD protection:
  • HBM JEDEC JS-001-2012 exceeds 2000 V
  • MM JESD22-A115-C exceeds 200 V
  • CDM JESD22-C101F exceeds 1000 V
• Specified from ?40 °C to +85 °C and ?40 °C to +125 °C

• BLF573 - HF/VHF功率LDMOS晶体管
• KMZ41 - 磁阻传感器
• BZX84J-B3V0 - 单倍齐纳二极管
• PMV30XPEA - 20 V, P-channel Trench MOSFET
• 74HCT165D - 8位串行输入/并行输出移位寄存器
• 74HC597PW - 8位移位寄存器，带输出触发器
• BUK7Y21-40E - N沟道40 V，21 mΩ标准电平MOSFET，采用LFPAK56封装
• BCM856BS; BCM856BS/DG - PNP/PNP匹配双晶体管
• HEF4007UB - 双互补对和反相器
• PDTA123TU - PNP配电阻晶体管；R1 = 2.2 kOhm，R2 = 开路