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DFN2020_6_SERIES - Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A

DFN2020_6_SERIES是NXP恩智浦公司的一款低压低VCEsat (BISS)晶体管产品，DFN2020_6_SERIES是Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A，本站介绍了DFN2020_6_SERIES的封装应用图解、特点和优点、功能等，并给出了与DFN2020_6_SERIES相关的NXP元器件型号供参考。

DFN2020_6_SERIES - Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A - 低压低VCEsat (BISS)晶体管 - 低VCEsat（BISS）晶体管 - 恩智浦

产品描述

Low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Type number

Configuration

VCEO

Solderable side pads

PBSS4130PAN

NPN/NPN

30 V

1 A

PBSS5130PAP

PNP/PNP

30 V

1 A

PBSS4130PANP

NPN/PNP

30 V

1 A

PBSS4230PAN

NPN/NPN

30 V

2 A

PBSS5230PAP

PNP/PNP

30 V

2 A

PBSS4230PANP

NPN/PNP

30 V

2 A

PBSS4160PAN

NPN/NPN

60 V

1 A

PBSS4160PANPS

NPN/NPN

60 V

1 A

yes

PBSS5160PAP

PNP/PNP

60 V

1 A

PBSS5160PAPS

PNP/PNP

60 V

1 A

yes

PBSS4160PANP

NPN/PNP

60 V

1 A

PBSS4160PANS

NPN/PNP

60 V

1 A

yes

PBSS4260PAN

NPN/NPN

60 V

2 A

PBSS5260PAP

PNP/PNP

60 V

2 A

PBSS4260PANP

NPN/PNP

60 V

2 A

PBSS4112PAN

NPN/NPN

120 V

1 A

PBSS5112PAP

PNP/PNP

120 V

1 A

PBSS4112PANP

NPN/PNP

120 V

1 A

产品特性和优势

Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified

产品应用

Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)

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