DFN2020_6_SERIES是NXP公司的一款低压低VCEsat (BISS)晶体管产品，DFN2020_6_SERIES是Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A，本站介绍了DFN2020_6_SERIES的封装应用图解、特点和优点、功能等，并给出了与DFN2020_6_SERIES相关的NXP元器件型号供参考。
DFN2020_6_SERIES - Collector-emitter voltage VCEO = 30 V, 60 V and 120 V; collector current IC = 1 A and 2 A - 低压低VCEsat (BISS)晶体管 - 低VCEsat（BISS）晶体管 - 恩智浦, LLC
Low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Type number
Configuration
VCEO
IC
Solderable side pads
PBSS4130PAN
NPN/NPN
30 V
1 A
no
PBSS5130PAP
PNP/PNP
30 V
1 A
no
PBSS4130PANP
NPN/PNP
30 V
1 A
no
PBSS4230PAN
NPN/NPN
30 V
2 A
no
PBSS5230PAP
PNP/PNP
30 V
2 A
no
PBSS4230PANP
NPN/PNP
30 V
2 A
no
PBSS4160PAN
NPN/NPN
60 V
1 A
no
PBSS4160PANPS
NPN/NPN
60 V
1 A
yes
PBSS5160PAP
PNP/PNP
60 V
1 A
no
PBSS5160PAPS
PNP/PNP
60 V
1 A
yes
PBSS4160PANP
NPN/PNP
60 V
1 A
no
PBSS4160PANS
NPN/PNP
60 V
1 A
yes
PBSS4260PAN
NPN/NPN
60 V
2 A
no
PBSS5260PAP
PNP/PNP
60 V
2 A
no
PBSS4260PANP
NPN/PNP
60 V
2 A
no
PBSS4112PAN
NPN/NPN
120 V
1 A
no
PBSS5112PAP
PNP/PNP
120 V
1 A
no
PBSS4112PANP
NPN/PNP
120 V
1 A
no
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
