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BLP8G05S-200G技术文档下载：
BLP8G05S-200G产品应用图解：
BLP8G05S-200G - Power LDMOS transistor
BLP8G05S-200G是NXP公司的一款RF功率晶体管产品，BLP8G05S-200G是Power LDMOS transistor，本站介绍了BLP8G05S-200G的封装应用图解、特点和优点、功能等，并给出了与BLP8G05S-200G相关的NXP元器件型号供参考。
BLP8G05S-200G - Power LDMOS transistor - RF功率晶体管 - RF MMIC放大器与混频器 - 恩智浦, LLC
产品描述
200 W LDMOS power transistor for base stations applications at frequencies from 400 MHzto 500 MHz.
产品特性和优势
- High efficiency
- Excellent ruggedness
- Excellent thermal stability
- Integrated ESD protection
- Easy power control
- Designed for ISM operation (400 MHz to 500 MHz)
- Input integration for simple board design
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
产品应用
- RF power amplifiers for W-CDMA base stations and multi carrier applications in the 400 MHz to 500MHz frequency range
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