The BLM8G0710S-15PB(G) is a dual section, 2-stage power MMIC using NXP’s state of the artGEN8 LDMOS technology. This multiband device is perfectly suited as general purposedriver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available ingull wing or straight lead outline.

• Designed for broadband operation (frequency 700 MHz to 1000 MHz)
• High section-to-section isolation enabling multiple combinations
• Integrated temperature compensated bias
• Biasing of individual stages is externally accessible
• Integrated ESD protection
• Excellent thermal stability
• High power gain
• On-chip matching for ease of use
• Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)

• RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency range. Possiblecircuit topologies are the following:
  • Dual section or single ended
  • Doherty
  • Quadrature combined
  • Push-pull

• BGM1013 - MMIC宽带放大器
• BUK9510-100B - N沟道TrenchMOS逻辑电平FET
• PMDPB30XN - 20 V，双N沟道Trench MOSFET
• 74LVC1G06GS - 反相器，带开漏输出
• PBSS9110D - 100 V、1 A PNP低VCEsat (BISS)晶体管
• BLF8G27LS-140V - 功率LDMOS晶体管
• BLF8G27LS-150(G)V - 功率LDMOS晶体管
• TEA1753T - 具有集成DCM/ QR PFC控制器的HV启动DCM/ QR返驰控制器
• 74HCT273D - 带复位功能的八频D型触发器；正沿触发器
• BLF6G13L-250P - 功率LDMOS晶体管