BGU8M1UK - SiGe:C Low Noise Amplifier MMIC for LTE

BGU8M1UK是NXP恩智浦公司的一款LNAs产品，BGU8M1UK是SiGe:C Low Noise Amplifier MMIC for LTE，本站介绍了BGU8M1UK的封装应用图解、特点和优点、功能等，并给出了与BGU8M1UK相关的NXP元器件型号供参考。

BGU8M1UK - SiGe:C Low Noise Amplifier MMIC for LTE - LNAs - RF MMIC放大器与混频器 - 恩智浦

产品描述

The BGU8M1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes asan extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8M1UKrequires one external matching inductor.

The BGU8M1UK adapts itself to the changing environment resulting from co-habitation of differentradio systems in modern cellular handsets. It has been designed for low powerconsumption and optimal performance. At low jamming power levels it delivers 17 dB gainat a noise figure of 0.7 dB. During high power levels, it temporarily increases its biascurrent to improve sensitivity.

The BGU8M1UK is optimized for 1805 MHz to 2200 MHz.

产品特性和优势

Operating frequency from 1805 MHz to 2200 MHz
Noise figure (NF) = 0.7 dB
Gain = 17 dB
High input 1 dB compression point of -5 dBm
High in band IP3i of 3 dBm
Supply voltage 1.5 V to 3.1 V
Self shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.0 mA
Power-down mode current consumption < 1 μA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Extremely small Wafer Level Chip Scale Package (WLCSP) 0.65 mm x 0.44 mm x 0.2 mm;6 solder bumps; 0.22 mm bump pitch
180 GHz transit frequency - SiGe:C technology

产品应用

LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-endmodules

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