BGU8M1UK是NXP公司的一款LNAs产品，BGU8M1UK是SiGe:C Low Noise Amplifier MMIC for LTE，本站介绍了BGU8M1UK的封装应用图解、特点和优点、功能等，并给出了与BGU8M1UK相关的NXP元器件型号供参考。
BGU8M1UK - SiGe:C Low Noise Amplifier MMIC for LTE - LNAs - RF MMIC放大器与混频器 - 恩智浦, LLC
The BGU8M1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes asan extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8M1UKrequires one external matching inductor.
The BGU8M1UK adapts itself to the changing environment resulting from co-habitation of differentradio systems in modern cellular handsets. It has been designed for low powerconsumption and optimal performance. At low jamming power levels it delivers 17 dB gainat a noise figure of 0.7 dB. During high power levels, it temporarily increases its biascurrent to improve sensitivity.
The BGU8M1UK is optimized for 1805 MHz to 2200 MHz.
- Operating frequency from 1805 MHz to 2200 MHz
- Noise figure (NF) = 0.7 dB
- Gain = 17 dB
- High input 1 dB compression point of -5 dBm
- High in band IP3i of 3 dBm
- Supply voltage 1.5 V to 3.1 V
- Self shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5.0 mA
- Power-down mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Extremely small Wafer Level Chip Scale Package (WLCSP) 0.65 mm x 0.44 mm x 0.2 mm;6 solder bumps; 0.22 mm bump pitch
- 180 GHz transit frequency - SiGe:C technology
- LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-endmodules
