BGS8M2 - SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

BGS8M2是NXP恩智浦公司的一款LNAs产品，BGS8M2是SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE，本站介绍了BGS8M2的封装应用图解、特点和优点、功能等，并给出了与BGS8M2相关的NXP元器件型号供参考。

BGS8M2 - SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE - LNAs - RF MMIC放大器与混频器 - 恩智浦

产品描述

The BGS8M2 is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications,available in a small plastic 6-pin extremely thin leadless package. The BGS8M2 requiresone external matching inductor.

The BGS8M2 delivers system-optimized gain for both primary and diversity applicationswhere sensitivity improvement is required. The high linearity of these low noise devicesensures the required receive sensitivity independent of cellular transmit power level inFDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, theBGS8M2 can be switched off to operate in bypass mode at a 1 μA current, to lower powerconsumption.

The BGS8M2 is optimized for 1805 MHz to 2200 MHz.

产品特性和优势

Operating frequency from 1805 MHz to 2200 MHz
Noise figure (NF) = 0.85 dB
Gain 14.4 dB
High input 1 dB compression point of -3.5 dBm
Bypass switch insertion loss of 2.2 dB
High in band IP3i of 3.5 dBm
Supply voltage 1.5 V to 3.1 V
Self shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.8 mA
Power-down mode current consumption < 1 μA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level of 1

产品应用

LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules

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